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Hosted on MSNKioxia's new 10th gen 332-layer 4.8 GB/s 3D NAND flash is 33% faster than its 8th gen ICsKioxia's 10th generation 332-layer 3D NAND flash is up to 33% faster than prior-gen NAND, boasted the company at ISSCC 2025.
TOKYO -- Japanese chipmaker Kioxia Holdings has developed NAND flash memory technology with higher storage capacity and 33% faster interface speed, anticipating strong demand from artificial ...
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tom's Hardware on MSNSanDisk's new High Bandwidth Flash memory enables 4TB of VRAM on GPUs, matches HBM bandwidth at higher capacitySanDisk on Wednesday introduced an interesting new memory that could wed the capacity of 3D NAND and the extreme bandwidth ...
Japanese NAND Flash manufacturer Kioxia unveiled its latest advancement in NAND flash memory technology on February 20, ...
Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8Gb/s NAND interface speed, superior power efficiency, ...
Technology announced its low-power double data rate memory and universal flash storage 4.0 are featured in select devices in the ...
SanDisk describes HBF as stacking up to 16 layers of BiCS 3D NAND with through-silicon vias (TSVs). A logic layer enables ...
FMS: the Future of Memory and Storage, the premier event for memory and storage, has opened its call for presentations and panels for its 2025 event. Building on the momentum of its successful 2024 ...
The oversupply of NAND flash has forced memory chipmakers to implement production cuts in response to lower-than-expected orders from PC and smartphone manufacturers. Major players in ...
Sandisk wants to pack an extremely large amount of fast flash memory onto GPU accelerators. Large language models would thus ...
Emerging high-performance applications demand increasingly fast read throughputs from NOR-flash memory devices. At the same time, the pin-count required to implement ...
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