When it announced last year its ability to mass produce the parts using a 22nm process, Intel estimated performance increases of as much as 37 percent compared with 32nm planar-transistor devices ...
Core MOSFETs are developed from planar transistors and FinFETs to the latest Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs), and now to the cutting-edge vertical transistor 3D stacking ...
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